Diamond Film Formation by OH Radical Injection from Remote Microwave H2/H2O Plasma into Parallel-Plate RF Methanol Plasma.

  • Ikeda Masanobu
    Department of Quantum Engineering, School of Engineering, Nagoya University, Chikusa–ku, Nagoya 464–01, Japan
  • Mizuno Etsuko
    Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Meijo University, Tempaku–ku, Nagoya 468, Japan
  • Hori Masaru
    Department of Quantum Engineering, School of Engineering, Nagoya University, Chikusa–ku, Nagoya 464–01, Japan
  • Goto Toshio
    Department of Quantum Engineering, School of Engineering, Nagoya University, Chikusa–ku, Nagoya 464–01, Japan
  • Yamada Koji
    Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Meijo University, Tempaku–ku, Nagoya 468, Japan
  • Hiramatsu Mineo
    Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Meijo University, Tempaku–ku, Nagoya 468, Japan
  • Nawata Masahito
    Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Meijo University, Tempaku–ku, Nagoya 468, Japan

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Other Title
  • Diamond Film Formation by OH Radical In
  • Diamond Film Formation by OH Radical Injection from Remote Microwave H<sub>2</sub>/H<sub>2</sub>O Plasma into Parallel-Plate RF Methanol Plasma

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Abstract

Diamond film was successfully synthesized for the first time using a parallel-plate radio-frequency (RF 13.56 MHz) methanol ( CH3OH) plasma assisted by injection of hydrogen (H) and hydroxyl (OH) radicals generated by microwave H2/ H2O plasma. OH radical, in addition to H radical, injection into RF CH3OH plasma enhanced selective diamond growth and selective etching of the nondiamond phase. The effects of OH radical injection on the initial and growth stages of the diamond formation were investigated by changing H2O partial pressure in the microwave plasma. It was found that OH radical injection into RF CH3OH plasma enhanced the growth of diamond in the initial stage.

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