キャパシタンスXAFS法 -結晶欠陥・表面・界面の選択的構造解析- Capacitance XAFS Method : Site-Selective Analysis of Defect, Surface and Interface

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For local structure analyses of low dimensional structures in semiconductors, such as defects, interfaces and surfaces, a new site-selective x-ray absorption fine structure (XAFS) measurement, ′capacitance XAFS′method, is proposed. In this method, the x-ray photon energy dependence of a capacitance involved in various diode structures is measured. The capacitance is changed by an x-ray induced photoemission of a localized electron trapped in the low dimensional structures. Since the photoemission originates from the x-ray absorption of only the low dimensional structures, the site-selective analysis may be realized. Experiments using Schottky barrier diodes of A1GaAs: Se with a defect, ′DX center′, successfully indicate the site-selective XAFS spectra of the defect atom.

収録刊行物

  • 日本結晶学会誌  

    日本結晶学会誌 42(4), 372-376, 2000-08-31 

    The Crystallographic Society of Japan

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各種コード

  • NII論文ID(NAID)
    10004673786
  • NII書誌ID(NCID)
    AN00188364
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03694585
  • NDL 記事登録ID
    5466863
  • NDL 雑誌分類
    ZM46(科学技術--地球科学--岩石・鉱物・鉱床)
  • NDL 請求記号
    Z15-138
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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