Capacitance XAFS Method. Site-Selective Analysis of Defect, Surface and Interface.

• ISHII Masashi

  SPring-8高輝度光科学研究センター放射光研究所

Bibliographic Information

Other Title

• キャパシタンスＸＡＦＳ法　　結晶欠陥・表面・界面の選択的構造解析
• ジッケンシツ キャパシタンス XAFSホウ ケッショウ ケッカン ヒョウメン カイメン ノ センタクテキ コウゾウ カイセキ

Abstract

For local structure analyses of low dimensional structures in semiconductors, such as defects, interfaces and surfaces, a new site-selective x-ray absorption fine structure (XAFS) measurement, ′capacitance XAFS′method, is proposed. In this method, the x-ray photon energy dependence of a capacitance involved in various diode structures is measured. The capacitance is changed by an x-ray induced photoemission of a localized electron trapped in the low dimensional structures. Since the photoemission originates from the x-ray absorption of only the low dimensional structures, the site-selective analysis may be realized. Experiments using Schottky barrier diodes of A1GaAs: Se with a defect, ′DX center′, successfully indicate the site-selective XAFS spectra of the defect atom.

Journal

• Nihon Kessho Gakkaishi

  Nihon Kessho Gakkaishi 42 (4), 372-376, 2000

  The Crystallographic Society of Japan

Details

• CRID: 1390001204085612416
• NII Article ID: 10004673786
• NII Book ID: AN00188364
• DOI: 10.5940/jcrsj.42.372
• ISSN: 18845576
• ISSN: 03694585
• NDL BIB ID: 5466863
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I5466863
• Text Lang: ja
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed