Fabrication of Reactive Ion Etching Systems for Deep Silicon Machining (特集:マイクロマシン加工技術) Fabrication of Reactive Ion Etching Systems for Deep Silicon Machining
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Reactive ion etching (RIE) systems using capacitively coupled plasma (CCP) and inductively coupled plasma (ICP) sources with SF<sub>6</sub> gas have been developed for deep silicon machining with high aspect ratio. The developed RIE systems demonstrated high etch rate (2.3μm/min) and high selectivity (1700) for a sputtered nickel mask in silicon etching. A large capacity turbo molecular pump (TMP) with a small etching chamber was used to realize a low pressure with a high flow rate of etching gas. A circulatory cooling apparatus was used for cooling a silicon wafer. Etch rate showed uniformity within 10% for the area of 50cm<sup>2</sup>. Using the RIE system, we succeeded to etch a 200μm thick silicon wafer vertically through the thickness with an aspect ratio greater than 10. The RIE can be applied to fabricate three-dimensional silicon microstructures.
- The Journal of the Institute of Electrical Engineers of Japan
The Journal of the Institute of Electrical Engineers of Japan 117(1), 10-14, 1997-01
The Institute of Electrical Engineers of Japan