窒素イオンビームを用いたポリイミド膜の高アスペクト比微細加工 [in Japanese] High-Aspect-Ratio Patterning of Thick Polyimide Film by N_<> Ion Beam Etching [in Japanese]
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A high-aspect-ratio and precise patterning of thick polyimide film has been achieved using a 50-μm-thick polyimide film masked by 0.1-μm-thick Ta film. The film was etched by a low-energy N<sub>2</sub> ion beam with a single-grid Kaufman-type ion source. The selective ratio of the polyimide film vs. the Ta film reached more than 600. The wall angle of the polyimide pattern was about 2°. Etching rate experiments and XPS, FTIR, AFM analysis suggest that N<sub>2</sub> ion beam etching is a reactive ion etching.
- The Journal of the Institute of Electrical Engineers of Japan
The Journal of the Institute of Electrical Engineers of Japan 117(1), 39-44, 1997-01
The Institute of Electrical Engineers of Japan