Photostimulated Luminescence in KClxBr1-x: Eu Phosphor Ceramics as a Two-dimensional Image Sensor Material for Ionizing Radiation.

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  • Nanto H.
    Electron Device System Research Laboratory, Kanazawa Institute of Technology
  • Douguchi Y.
    Industrial Research Institute of Ishikawa
  • Kadota M.
    Electron Device System Research Laboratory, Kanazawa Institute of Technology
  • Nishishita J.
    Electron Device System Research Laboratory, Kanazawa Institute of Technology
  • Ikeda M.
    Electron Device System Research Laboratory, Kanazawa Institute of Technology
  • Shinkawa T.
    Electron Device System Research Laboratory, Kanazawa Institute of Technology
  • Kashiwagi N.
    Electron Device System Research Laboratory, Kanazawa Institute of Technology
  • Nasu S.
    Department Materials Science and Engineering, Kanazawa Institute of Technology

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  • Photostimulated Luminescence in KClxBr1

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Intense photostimulated luminescence (PSL) is observed, for the first time, in X-ray-irradiated KClxBr1-x:Eu phosphor ceramics. The peak in the stimulation spectrum for PSL red-shifts with increasing the Br content of KClxBr1-x:Eu phosphor. The intensity of PSL with a peak at about 420nm increases linearly with increasing X-ray dose over the wide range. The KBr:Eu phosphor exhibits excellent fading characteristics at room temperature. These results strongly suggest that KClxBr1-x:Eu phosphor, especially KBr:Eu phosphor is useful as a material for two-dimensional image sensor for ionizing radiation.

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