SDB-SOIウェハを用いたセンサ用高温CMOS集積回路の試作 A study on high temperature CMOS circuits for sensor applications with SDB-SOI wafer

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High temperature CMOS circuits for sensor applications have been fabricated using Silicon-Direct-Bonding (SDB) SOI wafers. A novel SOI-MOSFET structure was fabricated on silicon film of 800nm in thickness above a buried oxide layer of 1μm in thickness. The MOSFET was designed in order to remove Kink-effect and parasitic bipolar transistor effect, and the fabrication process was optimized by process simulator(SUPREM III). The signal conditioning circuits (Operational amplifier and C-F converter) for sensor applications were designed and fabricated with the MOSFET. These MOSFET and signal conditioning circuits were operated up to 300°C. The temperature dependence of the MOSFET and the characteristic of the circuits were evaluated from room temperature to 300°C.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 117(7), 377-383, 1997-07 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004832298
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    4237374
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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