SDB-SOIウェハを用いたセンサ用高温CMOS集積回路の試作 [in Japanese] A study on high temperature CMOS circuits for sensor applications with SDB-SOI wafer [in Japanese]
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High temperature CMOS circuits for sensor applications have been fabricated using Silicon-Direct-Bonding (SDB) SOI wafers. A novel SOI-MOSFET structure was fabricated on silicon film of 800nm in thickness above a buried oxide layer of 1μm in thickness. The MOSFET was designed in order to remove Kink-effect and parasitic bipolar transistor effect, and the fabrication process was optimized by process simulator(SUPREM III). The signal conditioning circuits (Operational amplifier and C-F converter) for sensor applications were designed and fabricated with the MOSFET. These MOSFET and signal conditioning circuits were operated up to 300°C. The temperature dependence of the MOSFET and the characteristic of the circuits were evaluated from room temperature to 300°C.
- The Journal of the Institute of Electrical Engineers of Japan
The Journal of the Institute of Electrical Engineers of Japan 117(7), 377-383, 1997-07
The Institute of Electrical Engineers of Japan