Three Dimensional Polysilicon Type Accelerometer Using Poly-Si/SiOX_n/Si/SiOX_n/Si Structure

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Three dimensional accelerometer was fabricated by Poly-Si/SiO<sub>2</sub>/Si/SiO<sub>2</sub>/Si structure using SDB(silicon direct bonding) technology and LPCVD. The optimization of fabricated accelerometer was performed using the results of FEM(finite element method) simulation. The variations of stress according to each direction were utilized to detect the three dimensional acceleration and eliminate cross-axis sensitivities. The values of TCR(temperature coefficient of resistance) for polysilicon with two different dose amount were 611[ppm/°C] and 644 [ppm/°C] in the 25°C-250°C range respectively. TCO(temperature coefficient of offset) shift for X, Y and Z-axis Wheatstone bridge outputs was about 0-0.07[%F.S.], 0.028-0.016[%F. S. ] and 0.007--0.004[%F.S.] in the 25°C-160°C range respectively. The sensitivities of fabricated sensor for X, Y and Z-axis acceleration were about 0.0 6[mV/V⋅g], 0.06[mV/V⋅g] and 0. 13[mV/V⋅g] at a room temperature. The cross-axis sensitivity for X, Y and Z-axis acceleration was about 0.0093[mV/V⋅g], which stands for the elimination of cross-axis sensitivities as designed. The developed sensor can be used in many applications such as automotive and robot industry, navigation system and earthquake detection, etc..

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 117(7), 384-390, 1997-07 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004832314
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    4237375
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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