アルゴンビームエッチングによるシリコンの常温無加圧接合 Pressureless Silicon Direct Bonding at Room Temperature by Argon Beam Etching

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We have developed a new method for the direct bonding of silicon wafers at room temperature. In the method Ar fast atom beam etching is used to modify the surface of the specimens, and they are bonded in the vacuum. With the appropriate Ar beam etching, the bonding prepared at room temperature is as strong as that prepared by conventional wet surface modification treatment and high temperature annealing. In the process, pressing load is not necessary when two specimens are mated. Intimate contact at the bonding interface is supposed to be achieved by the attractive force between the sarface. Crystal orientation of the wafer has very small effect on the bonding. Even between the different crystal faces, the bonding is possible. The applicability of this method to the small area bonding was proved by the bonding of 100μm wide lines. These results demonstrate the advantages of this method. This method is promising as an assembling and packaging method for micro electro mechanical systems.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 117(8), 420-425, 1997-08 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004832388
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    4267505
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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