H_2 Sensing Properties of Metal Oxide Semiconductors as Varistor-Type Gas Sensors

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Current-voltage characteristics of semiconductive oxides have been investigated in air and in H<sub>2</sub> balanced with air at elevated temperatures. A shift in breakdown voltage to a high electric field was observed for Cr<sub>2</sub>O<sub>3</sub>, which is a typical p-type semiconductor, upon exposure to H<sub>2</sub>, while n-type semiconductors exhibited a reverse shift in breakdown voltage. Among oxide specimens, Nb<sub>2</sub>O<sub>5</sub> was found to be the most excellent candidate for a varistor-type sensor, being accompanied with high H<sub>2</sub> sensitivity, excellent mechanical strength and good resistance to high electric field. Further investigations have revealed that the H<sub>2</sub> sensing properties of Nb<sub>2</sub>O5 could be improved by 1.0mol% Bi<sub>2</sub>O<sub>3</sub> doping. Newly formed Bi<sub>2</sub>Nb<sub>10</sub>O<sub>28</sub> phase was suggested to play an important role in enhancing breakdown voltage in air and then the H<sub>2</sub> sensitivity.

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  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 117(11), 560-564, 1997-11 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004832751
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    4323369
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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