High-Performance 801×512-Element PtSi Schottky-Barrier Infrared Image Sensor (特集:特殊イメ-ジング技術) High-performance 801x512-element PtSi Schottky-barrier infrared image sensor
A high-performance 801×512-element PtSi Schottky-barrier infrared image sensor has been developed with an enhanced Charge Sweep Device (CSD) readout architecture. In the enhanced CSD, the power consumption of the CSD has been reduced by employing a multiphase CSD with an on-chip multiphase CMOS clock generator. Flexible vertical scan is also possible using a newly developed transfer gate scanner. A large fill factor of 61% is obtained in spite of the small pixel size of 17×20μm<sup>2</sup>. The differential temperature response and noise equivalent temperature difference with f/1.2 optics at 300K were 2.2×10<sup>4</sup> electrons/K and 0.037K, respectively. The saturation signal level was 2.1×10<sup>6</sup> electrons and the total power consumption of the device was less than 50mW.
- 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society
電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 117(12), 588-593, 1997-12-01
The Institute of Electrical Engineers of Japan