Monolithic Pyroelectric Infrared Image Sensor Using PVDF Thin Film (特集:特殊イメ-ジング技術) MONOLITHIC PYROELECTRIC INFRARED IMAGE SENSOR USING PVDF THIN FILM
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A 16×16 monolithic pyroelectric infrared image sensor has been developed. The image sensor utilizes an electro-spray (ESP) deposited polyvinylidene fluoride (PVDF) thin film as a pyroelectric material, a buried channel MOSFET as a low noise detection device, and a micromachined four-beams supported membrane as a thermal isolation structure. A voltage sensitivity of 6600V/W and a detectivlty of 1.6×10<sup>7</sup>cmHz<sup>1/2</sup>W<sup>-1</sup> have been realized with a sensing area of 75×75μm<sup>2</sup>.
- The Journal of the Institute of Electrical Engineers of Japan
The Journal of the Institute of Electrical Engineers of Japan 117(12), 607-611, 1997-12-01
The Institute of Electrical Engineers of Japan