p形CVDダイヤモンド膜のピエゾ抵抗効果特性 Piezoresistive Property of p-type CVD Diamond Films

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Electrical and piezoresistive properties of chemical-vapor-deposited boron-doped p-type polycrystalline diamond films were investigated. The p-type polycrystalline diamond films of about 2μm thickness were grown on a flat insulating polycrystalline diamond layer using a conventional microwave plasma CVD system. The p-type CVD diamond film exhibited similar quality as homoepitaxial single crystalline diamond film with activation energy of 0.31-0.33eV. Piezoresistor (500μm long and 50μm wide) constituted from the optimized p-type polycrystalline diamond films were fabricated on diaphragm structure using photolithography and reactive-ion etching in an oxygen plasma. Relative change of the electrical resistance (-Δ<i>R/R<sub>0</sub></i>) of the diamond piezoresistor was almost proportional to the apphed strain ε, Gauge factor <i>K</i> for the p-type diamond piezoresistor was derived to be about 1000 at room temperature and above 700 even at 473K.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 117(12), 617-621, 1997-12-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004832836
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    4353774
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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