Piezoresistive Property of p-type CVD Diamond Films

• Deguchi Masahiro

  Matsushita Electric Industrial Co., Ltd.

• Kitabatake Makoto

  Matsushita Electric Industrial Co., Ltd.

Bibliographic Information

Other Title

• p形CVDダイヤモンド膜のピエゾ抵抗効果特性
• pガタ CVD ダイヤモンド マク ノ ピエゾ テイコウ コウカ トクセイ

Abstract

Electrical and piezoresistive properties of chemical-vapor-deposited boron-doped p-type polycrystalline diamond films were investigated. The p-type polycrystalline diamond films of about 2μm thickness were grown on a flat insulating polycrystalline diamond layer using a conventional microwave plasma CVD system. The p-type CVD diamond film exhibited similar quality as homoepitaxial single crystalline diamond film with activation energy of 0.31-0.33eV. Piezoresistor (500μm long and 50μm wide) constituted from the optimized p-type polycrystalline diamond films were fabricated on diaphragm structure using photolithography and reactive-ion etching in an oxygen plasma. Relative change of the electrical resistance (-ΔR/R₀) of the diamond piezoresistor was almost proportional to the apphed strain ε, Gauge factor K for the p-type diamond piezoresistor was derived to be about 1000 at room temperature and above 700 even at 473K.

Journal

• IEEJ Transactions on Sensors and Micromachines

  IEEJ Transactions on Sensors and Micromachines 117 (12), 617-621, 1997

  The Institute of Electrical Engineers of Japan

Keywords

• p形ダイヤモンド膜
• 化学気相合成
• ピエゾ抵抗効果
• ゲージ率

Details

• CRID: 1390282679438949632
• NII Article ID: 10004832836
• NII Book ID: AN1052634X
• DOI: 10.1541/ieejsmas.117.617
• ISSN: 13475525
• ISSN: 13418939
• ISSN: http://id.crossref.org/issn/13418939
• NDL BIB ID: 4353774
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4353774
• Web Site: http://www.jstage.jst.go.jp/article/ieejsmas1995/117/12/117_12_617/_pdf
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• Abstract License Flag: Disallowed