Anisotropic Bulk Etching of (110) Silicon with High Aspect Ratio

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The characteristics of (110) silicon anisotropic bulk etching are studied with varied temperature and concentration of aqueous KOH solution. The etch rates of (110) and (111) planes increase with increasing temperature but decrease with increasing concentration. The maximum etch rate ratio is above 150 at 45 exact wt.% and 60°C of aqueous KOH solution. Surface roughness varies greatly with concentration, and the minimum roughness is observed in an aqueous KOH solution of 41 exact wt.%. In 41 exact wt.% aqueous KOH solution at 65°C, comb structure have been fabricated which are 8μm wide, 150μm high and separated by 7μm gaps, using a comb mask pattern 10μm wide with 5μm gaps.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 118(1), 32-36, 1998-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004832950
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    4366752
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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