Anisotropic Bulk Etching of (110) Silicon with High Aspect Ratio

• Kim Seong-Hyok

  School of Electrical Engineering, Seoul National University

• Lee Sang-Hun

  School of Electrical Engineering, Seoul National University

• Lim Hyung-Taek

  School of Electrical Engineering, Seoul National University

• Kim Yong-Kweon

  School of Electrical Engineering, Seoul National University

• Lee Seung-Ki

  Department of Electrical Engineering, Dankook University

書誌事項

タイトル別名

• Anisotropic Bulk Etching of 110 Silicon

抄録

The characteristics of (110) silicon anisotropic bulk etching are studied with varied temperature and concentration of aqueous KOH solution. The etch rates of (110) and (111) planes increase with increasing temperature but decrease with increasing concentration. The maximum etch rate ratio is above 150 at 45 exact wt.% and 60°C of aqueous KOH solution. Surface roughness varies greatly with concentration, and the minimum roughness is observed in an aqueous KOH solution of 41 exact wt.%. In 41 exact wt.% aqueous KOH solution at 65°C, comb structure have been fabricated which are 8μm wide, 150μm high and separated by 7μm gaps, using a comb mask pattern 10μm wide with 5μm gaps.

収録刊行物

• 電気学会論文誌Ｅ（センサ・マイクロマシン部門誌）

  電気学会論文誌Ｅ（センサ・マイクロマシン部門誌） 118 (1), 32-36, 1998

  一般社団法人 電気学会

キーワード

• (110) silicon
• anisotropic bulk etching
• high aspect ratio
• comb structure

詳細情報

• CRID: 1390282679439435136
• NII論文ID: 10004832950
• NII書誌ID: AN1052634X
• DOI: 10.1541/ieejsmas.118.32
• ISSN: 13475525
• ISSN: 13418939
• NDL書誌ID: 4366752
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4366752
• Web Site: http://www.jstage.jst.go.jp/article/ieejsmas1995/118/1/118_1_32/_pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可