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- Hiwatari Tadao
- Tokyo Denki University
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- Hara Kazuhiro
- Tokyo Denki University
書誌事項
- タイトル別名
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- NO<sub>x</sub> Sensor Using Multi-Layered Semiconducting Thin-Film
- NOx Sensor Using Multi-Layered Semicond
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We have developed a NOx sensor using a multi-layered semiconducting thin-film. The first layer (current conduction region) is composed of Fe2O3 (91mol%), TiO2 (5mol%) and MgO (4mol%), and the second layer (gas sensitive region) is composed of SnO2 (96mol%) and V2O5 (4mol%). The resistance of the sensor increases when it is placed in an air including NO or NO2. The sensor is thus sensitive to both NO and NO2. By doping the SnO2 layer with V2O5 (4mol%), the operating temperature decreases and the sensitivity increases for these gases. The sensor detects NOx at a concentration as low as a few ppm at a relatively low temperature of 200°C. The response times of the sensor to NO and NO2 are 60s and 80s at 350°C, respectively, though they are longer at lower temperatures. The sensor is also sensitive to reducing gases such as C3H8, i-C4H10, C2H4, CO, and H2. These reducing gases, however, can be distinguished from NOx because the resistance of the sensor decreases in these gases. The sensitivity does not degrade for at least 3 months when it is periodically cleaned by a heat treatment at 500°C for 1h.
収録刊行物
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- 電気学会論文誌E(センサ・マイクロマシン部門誌)
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電気学会論文誌E(センサ・マイクロマシン部門誌) 118 (2), 136-140, 1998
一般社団法人 電気学会
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詳細情報 詳細情報について
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- CRID
- 1390001204460404736
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- NII論文ID
- 10004833219
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
- http://id.crossref.org/issn/13418939
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- NDL書誌ID
- 4392297
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
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- 抄録ライセンスフラグ
- 使用不可