RFスパッタリング法によるSnO_2薄膜の膜構造とガス感度特性 [in Japanese] Dependence of gas sensitivity on micro-structures on SnO2 thin films deposited by RF-sputtering [in Japanese]
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The influence of RF-sputtering conditions on the micro-structures of SnO<sub>2</sub> thin films were investigated and the mechanism of gas sensing in the film was studied. As a result, the micro-structure (morphologic and crystallografic) of SnO<sub>2</sub> thin films was well affected by sputtering gas pressures. In this case, the granular size of SnO<sub>2</sub> and distance between granules increased as the pressure was increased. Moreover, post-annealing for the films enhanced these tendencies. For the gas sensitivity, the more porous the film structure was, the higher the sensitivity was. On the other hand, the gas response time was just opposite to that. From these results, the sensitivity of SnO<sub>2</sub> thin films remarkably depends on the film porosity and gas diffusivity into the films.
- The Journal of the Institute of Electrical Engineers of Japan
The Journal of the Institute of Electrical Engineers of Japan 118(2), 141-146, 1998-02
The Institute of Electrical Engineers of Japan