A Cd_<1-x>Zn_xTe γ-ray Detector Sensitive in High Energy Regions

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CdTe semiconductor radiation detectors, including CdZnTe detectors, have disadvantages in that they are very difficult to use to measure the γ-ray energy in the high energy region above 1 MeV because of the small mobility of charge carriers, although they can be used at room temperature. It was suggested that a stacked structure of CdTe elements be used in order to improve the sensitivity in the high energy regions. In this paper, it is suggested that a highly precise detector response simulation within 5% errors of the full energy peak efficiency be conducted to provide ideas for the design of the detector structure. The fundamental characteristics of both the CdTe detector and CdZnTe detector were investigated to evaluate the feasibility of the high energy region sensitive Cd<sub>1-x</sub>Zn<sub>x</sub>Te detector.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 118(3), 187-192, 1998-03-01 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004833316
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    4413379
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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