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- Nishizawa Hiroshi
- Mitsubishi Electric Co.
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- Ikegami Kazunori
- Mitsubishi Electric Co.
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- Usami Teruo
- Mitsubishi Electric Co.
書誌事項
- タイトル別名
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- A Cd<sub>1-x</sub>Zn<sub>x</sub>Te γ-ray Detector Sensitive in High Energy Regions
- Cd1-xZnxTe ガンマーray Detector Sensitive i
この論文をさがす
抄録
CdTe semiconductor radiation detectors, including CdZnTe detectors, have disadvantages in that they are very difficult to use to measure the γ-ray energy in the high energy region above 1 MeV because of the small mobility of charge carriers, although they can be used at room temperature. It was suggested that a stacked structure of CdTe elements be used in order to improve the sensitivity in the high energy regions. In this paper, it is suggested that a highly precise detector response simulation within 5% errors of the full energy peak efficiency be conducted to provide ideas for the design of the detector structure. The fundamental characteristics of both the CdTe detector and CdZnTe detector were investigated to evaluate the feasibility of the high energy region sensitive Cd1-xZnxTe detector.
収録刊行物
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- 電気学会論文誌E(センサ・マイクロマシン部門誌)
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電気学会論文誌E(センサ・マイクロマシン部門誌) 118 (3), 187-192, 1998
一般社団法人 電気学会
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詳細情報
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- CRID
- 1390282679439373824
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- NII論文ID
- 10004833316
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- NII書誌ID
- AN1052634X
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- ISSN
- 13475525
- 13418939
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- NDL書誌ID
- 4413379
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可