A Cd_1-xZn_xTe γ-ray Detector Sensitive in High Energy Regions

• Nishizawa Hiroshi

  Mitsubishi Electric Co.

• Ikegami Kazunori

  Mitsubishi Electric Co.

• Usami Teruo

  Mitsubishi Electric Co.

Bibliographic Information

Other Title

• A Cd1-xZnxTe γ-ray Detector Sensitive in High Energy Regions
• Cd1-xZnxTe ガンマーray Detector Sensitive i

Abstract

CdTe semiconductor radiation detectors, including CdZnTe detectors, have disadvantages in that they are very difficult to use to measure the γ-ray energy in the high energy region above 1 MeV because of the small mobility of charge carriers, although they can be used at room temperature. It was suggested that a stacked structure of CdTe elements be used in order to improve the sensitivity in the high energy regions. In this paper, it is suggested that a highly precise detector response simulation within 5% errors of the full energy peak efficiency be conducted to provide ideas for the design of the detector structure. The fundamental characteristics of both the CdTe detector and CdZnTe detector were investigated to evaluate the feasibility of the high energy region sensitive Cd_1-xZn_xTe detector.

Journal

• IEEJ Transactions on Sensors and Micromachines

  IEEJ Transactions on Sensors and Micromachines 118 (3), 187-192, 1998

  The Institute of Electrical Engineers of Japan

Keywords

• CdTe
• CdZnTe
• semiconductor radiation detector
• simulation
• EGS4
• carrier mobility x

Details

• CRID: 1390282679439373824
• NII Article ID: 10004833316
• NII Book ID: AN1052634X
• DOI: 10.1541/ieejsmas.118.187
• ISSN: 13475525
• ISSN: 13418939
• NDL BIB ID: 4413379
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I4413379
• Web Site: http://www.jstage.jst.go.jp/article/ieejsmas1995/118/3/118_3_187/_pdf
• Text Lang: en
• Data Source:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• Abstract License Flag: Disallowed