GIS監視用半導体圧力センサシステムの開発 A Semiconductor Pressure Sensing for Monitoring of GIS

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The authors describe in this paper the application of a semiconductor pressure device for a pressure monitoring sensor, applicable to both continuous monitoring and fault locating of a gas insulated switchgear (GIS). Improvements required for these purposes are long term stability against temperature and supersensitivity for detecting a minute pressure variation caused by the fault. To get high sensitivity over a wide range, the amplifier having changeable ranges are presented. To compensate the output fluctuation due to temperature, we introduce a current driven circuit, a current source designed to have opposite characteristics to the piezzo resistance of the semiconductor and a digital compensation method. Offset drift by temperature is solved by use of AC drive. The temperature stability of the sensor consequently come at 0.01%. For high SN ratio required for the fault locating, we adopt digital filters, and pattern matching. The sensor is achieved 10Pa sensitivity with 700kPa dynamic range.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 119(4), 221-228, 1999-04 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004833834
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    4705165
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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