CCD イメージセンサにおける基板不純物密度の変動と飽和信号レベルの変動の関係 A Discussion on the Relation between Substrate Impurity Concentration Fluctuation and Saturated Signal Fluctuation in the Charge Coupled Device Image Sensors

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The saturation signal level of a photodiode with vertical overflow drain, that is generally used in CCD image sensors, depends markedly on a substrate impurity concentration. The relation between them was obtained analytically, for the first time. The analytical result was compared with that of a 3 dimensional numerical analysis to examine the applicability of the analytical solution. Results of the two analyses coincided qualitatively. To examine subsrate impurity fluctuation, the relation between saturation signal and substrate impurity concentration, that was obtained from the 3 dimensional analysis, was applied to a saturated horizontal line signal that was obtained from a CCD image sensor made on a peripheral region of a 5 inch CZ wafer.<br>The substrate impurity fluctuation of the sensor was estimated to be ±65.7%. Also, an unique photodiode structure was proposed to minimize the effect of the substrate impurity cocentration fluctuation on the saturated signal fluctuation.

収録刊行物

  • 電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society  

    電気学会論文誌. E, センサ・マイクロマシン準部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A publication of Sensors and Micromachines Society 119(5), 295-301, 1999-05 

    The Institute of Electrical Engineers of Japan

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各種コード

  • NII論文ID(NAID)
    10004833989
  • NII書誌ID(NCID)
    AN1052634X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    13418939
  • NDL 記事登録ID
    4716398
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-B380
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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