臭素吸着Ｓｉ（１１１）表面の原子層エッチングと電子刺激脱離

DOI Web Site Web Site 被引用文献1件 参考文献27件

書誌事項

タイトル別名
  • Atomic-Layer Etching and Electron-Stimulated Desorption of Br-Chemisorbed Si(111) Surfaces.
  • シュウソ キュウチャク Si 111 ヒョウメン ノ ゲンシソウ エッチング ト デンシ シゲキ ダツリ

この論文をさがす

抄録

Atomic-layer etching and electron-stimulated desorption of Br-chemisorbed Si(111)-7×7 surfaces were investigated by scanning tunneling microscope. In a Br2 dose of 100 L, most of the Si adatoms are saturated with Br atoms, while the 7×7 structure is completely retained. In further Br2 doses up to 400 L, most of the Si adatoms are etched, and the underlying rest-atom layer is imaged during the tip scanning at a sample bias of +3 V. Irradiating Br-chemisorbed surfaces with the field-emitted electrons from an STM tip, which was farther away from the sample than at usual observation, induced various desorption behavior depending on the initial Br coverage and electron energy. At low Br coverage, Br atoms desorb but no atomical changes on the Si surface occur. At saturation coverage, Si adatoms as well as Br atoms desorb remarkably. The cross section of Br atom desorption first increases near 15 eV and then increases by orders of magnitude with an electron energy up to 150 eV. The cross section of adatom desorption, in contrast, is much less dependent on the electron energy in the above energy region. The desorption behavior is discussed in terms of electronic excitation at the Br-chemisorbed Si(111) surface.

収録刊行物

  • 表面科学

    表面科学 21 (4), 232-238, 2000

    公益社団法人 日本表面科学会

被引用文献 (1)*注記

もっと見る

参考文献 (27)*注記

もっと見る

詳細情報 詳細情報について

問題の指摘

ページトップへ