CVD Process Simulation for TiN, Mo Film Growth Rate Distributions

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  • Yoshikawa Noboru
    School of Metallurgy, Division of Engineering, Graduate Schools Tohoku University
  • Kikuchi Atsushi
    School of Metallurgy, Division of Engineering, Graduate Schools Tohoku University
  • Taniguchi Shoji
    School of Metallurgy, Division of Engineering, Graduate Schools Tohoku University

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Growth rate distributions of chemical-vapor-deposited TiN and Mo films in a horizontal tubular reactor were simulated, and the gas flow, heat and mass transfer were analyzed. This study compared calculated results obtained by different models.<BR>The parabolic gas velocity distribution at the inlet persisted throughout the reactor, and this tendency was common in models with and without consideration of heat transfer. The temperature difference between the central axis and the reactor wall became larger with the increase of gas velocity.<BR>TiN film growth rate distributions were mostly predicted by a model without consideration of heat transfer and gas phase decomposition reactions because the surface reaction rate was the rate limiting process of the film deposition. Mo film growth rates depended more on the partial pressure of H2 than on that of MoCl5, and a large growth rate peak was formed in the distribution at high PH<SUB>2</SUB>. These phenomena were explained by considering the behavior of the intermediate gas species.

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