Prearation of B4C Thin Film by Intense Pulsed Ion-Beam Evaporation

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  • Kitajima Kazuo
    Extreme Energy-Density Research Institute, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
  • Suzuki Tsuneo
    Extreme Energy-Density Research Institute, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
  • Jiang Weihua
    Extreme Energy-Density Research Institute, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan
  • Yatsui Kiyoshi
    Extreme Energy-Density Research Institute, Nagaoka University of Technology, Nagaoka, Niigata 940-2188, Japan

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タイトル別名
  • Preparation of B4C Thin Film by Intense Pulsed Ion-Beam Evaporation.
  • Preparation of B<sub>4</sub>C Thin Film by Intense Pulsed Ion-Beam Evaporation

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Boron carbide (B4C) is known as a material having hardness, wear resistance and stability at high temperature. The preparation of thin films of B4C, therefore, is very important from the viewpoint of industrial applications. We have experimentally attempted to prepare thin films of B4C using the pulsed ion-beam evaporation (IBE) technique, where high-density ablation plasma is produced by an intense pulsed ion beam interaction with the target. The crystallized B4C thin films have been successfully deposited on a Si (100) substrate by front-side and mask-side deposition. Absorptions associated with the B-C combination and the vibration of B12–B12 clusters have been observed by Fourier transform infrared spectroscopy. The Vickers hardness of the film deposited by front-side deposition is observed to be HV∼ 2300.

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