分子動力学法によるシリコン酸化膜の大規模モデリング Large-scale Modeling of Silicon-dioxide Films by Means of Molecular Dynamics

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Large-scale modeling of ultra-thin SiO<Sub>2</Sub> films on Si(001) surfaces has been performed by means of molecular dynamics utilizing our original inter-atomic potential energy function for Si, O mixed systems. The SiO<Sub>2</Sub> film is formed by layer-by-layer insertion of O atoms into Si-Si bonds in a Si wafer from the surface. The obtained models reproduce quantitatively the structural transition layers near the interface. Through a modeling of vicinal SiO<Sub>2</Sub>/Si(001) model including atomic steps, it has been found that oxide film near the step-edge is preferentially amorphized. For a more advanced modeling method, we propose a new simulation procedure where O atoms are introduced into the substrate in one-by-one manner. In the calculation, the oxidation is started from the surface and abrupt change in composition at the SiO<Sub>2</Sub>/Si interface is reproduced. Thus, the classical molecular dynamics is a powerful method together with a simplified inter-atomic potential function applicable to mixed systems.

収録刊行物

  • 表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan

    表面科学 : hyomen kagaku = Journal of the Surface Science Society of Japan 23(2), 74-80, 2002-02-10

    The Surface Science Society of Japan

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各種コード

  • NII論文ID(NAID)
    10008008281
  • NII書誌ID(NCID)
    AN00334149
  • 本文言語コード
    JPN
  • 資料種別
    REV
  • ISSN
    03885321
  • NDL 記事登録ID
    6066167
  • NDL 雑誌分類
    ZM35(科学技術--物理学)
  • NDL 請求記号
    Z15-379
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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