書誌事項
- タイトル別名
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- Development of Large-Area Uniform Deposition Technique on 1-m-Size Substrate by Catalytic Chemical Vapor Deposition.
- ショクバイ カガク キソウ セイチョウホウ ニ ヨル 1mサイズ キバン ジョウ エ ノ キンイツ タイセキ ギジュツ カイハツ
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抄録
Large-area deposition with 1-m size is demonstrated by catalytic chemical vapor deposition (Cat-CVD) apparatus equipped with newly developed showerhead catalyzers. The arrangement of catalyzer wires is determined by simulation based on the experimental results that decomposed species on catalyzers are transported by isotropic thermal diffusion without an influence of the gas flow. Uniformity of± 7.5% and deposition rate of 5.3 Å/s for amorphous silicon films are obtained using silane flow rate of only 100 sccm on the glass substrate with a size of 960 mm ×400 mm. These results suggest that the Cat-CVD is one of the most promising methods for fabrication of large-area devices such as thin-film transistors and solar cells.
収録刊行物
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- 真空
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真空 45 (3), 123-126, 2002
一般社団法人 日本真空学会
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詳細情報 詳細情報について
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- CRID
- 1390282679041447552
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- NII論文ID
- 10008202767
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- NII書誌ID
- AN00119871
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- COI
- 1:CAS:528:DC%2BD38XksFaku7s%3D
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- ISSN
- 18809413
- 05598516
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- NDL書誌ID
- 6144084
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- 本文言語コード
- ja
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可