Si(111)表面上におけるBaとNH_3の反応に関する研究 The Study of the Reaction of Ba and NH_3 on Si(111) Surfaces

この論文にアクセスする

この論文をさがす

著者

抄録

In order to understand the fundamental character for forming Ba<SUB>3</SUB>N on Si (111) surface, the following two studies have been carried out by means of Low Energy Electron Diffraction (LEED), and Auger Electron Spectroscopy (AES) and Ultraviolet Photoemission Spectroscopy (UPS). 1) Whether silicon nitride layer would be accepted as a diffusion barrier between Ba and Si layer was examined. Ba and Si atoms formed a compound layer above 400 degree Centigrade, so that the silicon nitride layer was disqualified as a diffusion barrier between Ba and Si layer. 2) The electronic states in the coadsorption of Ba and NH<SUB>3</SUB> on Si (111) surface were investigated. When less than 2 MLs Ba adsorbed Si (111) surface was exposed to NH<SUB>3</SUB>, the electronic states of Ba-N, N-H, and the lonepair electron pair of NH<SUB>3</SUB> appeared, and when more than 2 MLs Ba adsorbed Si (111) surface was exposed to NH<SUB>3</SUB>, the electronic states of Ba-H appeared in addition to three electronic states mentioned above.

収録刊行物

  • 真空

    真空 45(3), 196-199, 2002-03-20

    The Vacuum Society of Japan

参考文献:  6件中 1-6件 を表示

  • <no title>

    STEINBRENNER U.

    Z. anorg. alleg. Chem. 624, 228, 1998

    被引用文献1件

  • <no title>

    WEITERING H. H.

    Surf.Sci. 355, L271, 1996

    被引用文献7件

  • <no title>

    NISHIJMA M.

    Surf. Sci. 137, 473, 1984

    被引用文献1件

  • <no title>

    BJORKQVIST M.

    Phy. Rev. 57, 2327, 1998

    被引用文献1件

  • <no title>

    URANO T.

    Surf.Sci. 357/358, 459, 1996

    DOI 被引用文献2件

  • <no title>

    KROZER A.

    Phy. Rev. 53, 13808, 1996

    DOI 被引用文献1件

各種コード

  • NII論文ID(NAID)
    10008202929
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    6144266
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ