Transparent Conducting Indium Tin Oxide Films Prepared by Pulsed Laser Deposition Using High Power ArF Excimer Laser.

  • SUZUKI Akio
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • MORI Akihito
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • SAKAMOTO Jun
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • TANI Yoshiyuki
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • AOKI Takanori
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • MATSUSHITA Tatsuhiko
    Department of Electrical Engineering and Electronics, College of Engineering, Osaka Sangyo University
  • OKUDA Masahiro
    Department of Physics and Electronics, College of Engineering, Osaka Prefecture University

Bibliographic Information

Other Title
  • 高出力エキシマレーザーを用いたパルスレーザー堆積法で作製した酸化インジウムスズ透明導電膜
  • コウシュツリョク エキシマレーザー オ モチイタ パルスレーザー タイセキホウ デ サクセイ シタ サンカ インジウムスズ トウメイ ドウデン マク

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Abstract

In2O3 doped with 5 wt% SnO2 (indium-tin oxide (ITO) (5 wt%)) films were deposited on glass substrates by pulsed laser deposition using an ArF excimer laser (λ= 193 nm). In all experiments, repetition rates of 150 Hz, the energy density of 6 J/cm2, and an ablation time of 30-900 sec were used. A lowest resistivity of 8.45 × 10-5 Ω ·cm and an optical transmittance of more than 80% in the visible range of the spectrum were obtained for ITO (5 wt%) films of approximately 300-nm thickness fabricated at a substrate temperature of 400°C and oxygen pressure of 10 Pa. Smooth surfaces with an average surface roughness of 1.26 nm were observed by field-emission scanning electron microscopy (FESEM) and atomic force microscopy (AFM).

Journal

  • Shinku

    Shinku 45 (3), 243-246, 2002

    The Vacuum Society of Japan

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