Si(111)1×1表面上のSiアドアトムの有効電荷の研究 Study on an Effective Charge of Si Adatoms on a Si(111)1×1 Surface

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著者

    • 箕田 弘喜 MINODA Hiroki
    • 東京工業大学・大学院理工学研究科・物性物理学専攻 Department of Physics, Tokyo Institute of Technology

抄録

DC and AC parallel heating procedure was applied for quantitative study of in-phase step wandering instability on a Si (111) 1×1 vicinal surface induced by electromigration of Si adatoms. In-phase step wandering is one of the step instability where steps wander in-phase without changing step-step distance.<BR>By controlling dc component of heating current (or applied field) and temperature individually, dc current (or dc field) and temperature dependences of the period of the in-phase step wandering on the Si (111) 1×1 vicinal surface were investigated. Temperature dependence of an effective charge of Si adatoms on a Si (111) -1×1 surface was evaluated and at about 1270 K the effective charge is approximately 0.02 and it linearly decreases with temperature.

収録刊行物

  • 真空

    真空 45(3), 281-284, 2002-03-20

    The Vacuum Society of Japan

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各種コード

  • NII論文ID(NAID)
    10008203136
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    6144698
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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