シリコン基板を用いた単結晶酸化亜鉛薄膜の分子線エピタキシャル成長 Molecular Beam Epitaxial Growth of the Single Crystalline ZnO Films on Silicon Substrates

この論文にアクセスする

この論文をさがす

著者

抄録

It has been difficult to obtain single crystalline ZnO films on Si substrates due to the oxidation of Si surface during initial ZnO growth. In this letter, we report the growth of single crystalline ZnO films on Si (111) substrates using a buffer layer of CaF<SUB>2</SUB>. The films were grown by radical source molecular beam epitaxy, and revealed by x-ray diffraction to be in the c-axis orientation without in-plane rotational domains. An ultraviolet photoluminescence corresponding to the bandgap energy was dominant for the films even at room temperature. It is indicated by the results that the use of CaF<SUB>2</SUB> buffer layer is promising for the growth of high-quality ZnO (0001) films on Si (111) substrates.

収録刊行物

  • 真空

    真空 45(3), 301-304, 2002-03-20

    The Vacuum Society of Japan

参考文献:  9件中 1-9件 を表示

  • <no title>

    OHTOMO A.

    Mat. Soc. Eng. B54, 24, 1998

    被引用文献1件

  • <no title>

    BAGNALL D. M.

    J. Crystal Growth 184-185, 605, 1998

    被引用文献2件

  • <no title>

    KO H. J.

    Appl.Phys.Lett. 76, 1905, 2000

    被引用文献8件

  • <no title>

    IWATA K.

    J. Crystal Growth 214-215, 50, 2000

    被引用文献2件

  • <no title>

    CHOI J. H.

    J. Crystal Growth 226, 493, 2001

    被引用文献1件

  • <no title>

    WATANABE M.

    Jpn. J. Appl. Phys. 39, L964, 2000

    被引用文献10件

  • <no title>

    田畑仁

    固体物理 35, 42, 2000

    被引用文献2件

  • <no title>

    WU X. L.

    Appl. Phys. Lett. 78, 2285, 2001

    被引用文献4件

  • <no title>

    KO H. J.

    J. Crystal Growth 207, 87, 1999

    DOI 被引用文献2件

各種コード

  • NII論文ID(NAID)
    10008203178
  • NII書誌ID(NCID)
    AN00119871
  • 本文言語コード
    JPN
  • 資料種別
    SHO
  • ISSN
    05598516
  • NDL 記事登録ID
    6144748
  • NDL 雑誌分類
    ZN15(科学技術--機械工学・工業--流体機械)
  • NDL 請求記号
    Z16-474
  • データ提供元
    CJP書誌  NDL  J-STAGE 
ページトップへ