欠陥生成を取り入れた薄膜成長のモンテカルロシミュレーション : 孔埋め込みへの応用 Monte Carlo Simulation of Thin Film Growth with Defect Formation : Application to Via Filling

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抄録

Monte Carlo simulations of via filling have been performed using the lattice model of crystal growth, which allows vacancy formation in the film during the growth. Adsorption, desorption and surface diffusion of adatoms are taken into account. Using a two-dimensional model, we examined the film growth from the initial surface with hollow parts (wedge-shaped and flat-bottomed holes), the aspect ratio of which ranged from 0.5 to 4. When a wedge-shaped hole is filled with deposited atoms, small voids appear in the film, which are aligned in the growth direction. In the case of the flat-bottomed hole, on the other hand, large voids with several hundred vacant sites appear in the middle of the hole. The voids are elongated in the growth direction as the aspect ratio becomes large. These voids have a similar structure to those of the experiment of filling vias and trenches in Cu interconnections from the solution without additives. The mechanism of the void formation is discussed in relation to the aspect ratio and the overpotential.

収録刊行物

  • 表面技術 = The Journal of the Surface Finishing Society of Japan

    表面技術 = The Journal of the Surface Finishing Society of Japan 53(4), 250-255, 2002-04-01

    The Surface Finishing Society of Japan

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各種コード

  • NII論文ID(NAID)
    10008222324
  • NII書誌ID(NCID)
    AN1005202X
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09151869
  • NDL 記事登録ID
    6144022
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-291
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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