Si超微粒子を用いたELデバイスからの発光特性の改善 Improvement of Light Emission from Electroluminescent Device using Nanocrystalline Silicon

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Electroluminescent device (ELD) using nanocrystalline silicon (nc-Si) was fabricated by annealing of co-sputtering of Si and silicon dioxide (SiO<SUB>2</SUB>) targets and subsequently hydrofluoric (HF) acid solution treatment. The HF treatment made effective electron injection into the nc-Si and the resultant decrease in resistance of the ELD. The HF treatment also made P<SUB>b</SUB>-center, which act as a role of non-radiative recombination center, compensate with hydrogen atoms. From above effects of the HF treatment, the HF-treated ELD emits high efficiency red light with external quantum efficiency of 0.35% under low operating voltage of +4.5 V. Moreover, intensity of the red light emission from the HF-treated ELD is stable for continuous operation above 10 days (operating time of 15000 min).

収録刊行物

  • 電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society

    電気学会論文誌. A, 基礎・材料・共通部門誌 = The transactions of the Institute of Electrical Engineers of Japan. A, A publication of Fundamentals and Materials Society 122(6), 616-623, 2002-06-01

    一般社団法人 電気学会

参考文献:  38件中 1-38件 を表示

被引用文献:  3件中 1-3件 を表示

各種コード

  • NII論文ID(NAID)
    10008510279
  • NII書誌ID(NCID)
    AN10136312
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    03854205
  • NDL 記事登録ID
    6175005
  • NDL 雑誌分類
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL 請求記号
    Z16-793
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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