MA-PCSプロセスによるターゲットを用いた(Bi_2Te_3)_<0.25>(Sb_2Te_3)_<0.75>熱電薄膜の作製 Fabrication of (Bi_2Te_3)_<0.25>(Sb_2Te_3)_<0.75> Thermoelectric Film by Radio Frequency Sputtering Target Prepared by MA-PCS Process

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A p-type thermoelectric film of (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>0.25</SUB>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>0.75</SUB> was fabricated by radio frequency sputtering. The target for the sputtering was prepared by mechanical alloying (MA) and pulsed current sintering (PCS) process. The single phase of Bi<SUB>0.5</SUB>Sb<SUB>1.5</SUB>Te<SUB>3</SUB> was obtained by planetary ball milling Bi powder, Te powder and Sb powder for 36ks. The obtained powder was consolidated by PCS into the cylindrical target of 50 mm in diameter and 4mm in thickness at 643 K under a pressure of 13 MPa. The sintered body consisted of Bi<SUB>0.5</SUB>Sb<SUB>1.5</SUB>Te<SUB>3</SUB> without cracks. The sintered Bi<SUB>0.5</SUB>Sb<SUB>1.5</SUB>Te<SUB>3</SUB> was joined to Cu backing plate with In for an insertion by PCS process. The thin film of (Bi<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>0.25</SUB>(Sb<SUB>2</SUB>Te<SUB>3</SUB>)<SUB>0.75</SUB> was fabricated on a polyimide substrate by RF sputtering. The thickness of this thin film was about 15-20μm. This film was amorphous state and crystallized at about 520 K. The performance of this p-type thermoelectric film after the crystallization were 2.0mV in voltage and 2.9μA in current at 20 K of the difference between heating side temperature 353 K and cooling side temperature 333 K.

収録刊行物

  • 粉体および粉末冶金

    粉体および粉末冶金 49(5), 412-416, 2002-05-15

    Japan Society of Powder and Powder Metallurgy

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各種コード

  • NII論文ID(NAID)
    10008559598
  • NII書誌ID(NCID)
    AN00222724
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    05328799
  • NDL 記事登録ID
    6169476
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z17-274
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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