Ｘ線吸収微細構造（ＸＡＦＳ）による表面，界面の解析　　ＸＡＦＳ　測定の半導体への応用

• 大渕 博宣

  名古屋大学大学院工学研究科材料機能工学専攻

• 田渕 雅夫

  名古屋大学大学院工学研究科材料機能工学専攻

• 竹田 美和

  名古屋大学大学院工学研究科材料機能工学専攻

書誌事項

タイトル別名

• Studies on Surface and Interface with X-ray Absorption Fine Structure (XAFS). Application of XAFS Measurements to the Study of Semiconductors.
• XAFS測定の半導体への応用
• XAFS ソクテイ ノ ハンドウタイ エ ノ オウヨウ

抄録

We demonstrated that fluorescence XAFS measurements can reveal the local structures around dilute elements in thin semiconductor layers. In the GaAs samples doped with Er and O, majority of the Er atoms substituted Ga sublattices with adjacent two O atoms and two As atoms (Er-2O center). In the GaInN/GaN samples, it was shown that the segregation of InN phase occurred in the GaInN layer at a higher In-content (x = 0.30), although the segregation was not observed at a lower In-content (x = 0.05). XANES spectrum in the Tb-implanted SiO₂ sample was observed by detecting X-ray-excited visible luminescence. The spectrum was quite similar to that was measured by detecting fluorescence X-ray.

収録刊行物

• 表面科学

  表面科学 23 (6), 367-373, 2002

  公益社団法人 日本表面科学会

詳細情報

• CRID: 1390282681432534016
• NII論文ID: 10008563790
• NII書誌ID: AN00334149
• DOI: 10.1380/jsssj.23.367
• COI: 1:CAS:528:DC%2BD38XmtlSrtbs%3D
• ISSN: 18814743
• ISSN: 03885321
• NDL書誌ID: 6184712
• Web Site: http://id.ndl.go.jp/bib/6184712
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6184712
• Web Site: http://www.jstage.jst.go.jp/article/jsssj/23/6/23_6_367/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可