Transmission electron microscopy specimen preparation technique using focused ion beam fabrication: Application to GaAs metal-semiconductor field effect transistor

• YAMAGUCHI A.

収録刊行物

• J Vac Sci Technol

  J Vac Sci Technol 11 2016-2020, 1993

詳細情報

• CRID: 1573950399451342336
• NII論文ID: 10008809399
• NII書誌ID: AA10804928
• データソース種別:
  • CiNii Articles