ウェハ保管環境の MOS デバイス特性への影響 Influence of Wafer Storage Environment on MOS Device Characteristics

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The influence of wafer storage environment on oxidation and organic contamination of Si surfaces has been investigated. And the electronic reliability of thin (2.8 nm) SiO<SUB>2</SUB> films of metal-oxide-semiconductor (MOS) capacitors and MOS transistors has been measured as a function of the storage method. We found that shielding wafers from visible light is effective to prevent oxidation of silicon. Hydrogen terminated <I>p</I>-Si (100) (8 ∼ 12 Ωcm) wafers were stored in wafer boxes under various brightness levels. The oxidation rate in a dark box (∼ 0 lx) is found to be about one order of magnitude as small as that in a light box (∼ 1,000 lx). The MOS capacitors were fabricated by adding a storage process with various contamination levels before gate oxidation. It was indicated that for samples stored in the polyethersulfone (PES) box with a UV/photoelectron cleaning unit, the organic contamination level was substantially reduced, resulting in an improvement of the time dependent dielectric breakdown characteristics of the gate oxides. Furthermore we fabricated <I>n</I>-channel MOS transistors and investigated the influence of the organic contaminant before and after the gate oxidation on hot-electron degradation of the oxide. The wafer surfaces were contaminated with organic gases during the storage in a front opening unified pod (FOUP) made of polycarbonate for 6 h. In the result, the neutral traps were generated by hot-electron injection. It was shown that the density of the generated traps was larger for the pre-oxidation contamination than for the post-oxidation contamination. The model for the trap generation by the organic contamination was also discussed.

収録刊行物

  • エアロゾル研究 = Journal of aerosol research

    エアロゾル研究 = Journal of aerosol research 17(2), 96-104, 2002-06-20

    日本エアロゾル学会

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各種コード

  • NII論文ID(NAID)
    10008837105
  • NII書誌ID(NCID)
    AN10041511
  • 本文言語コード
    JPN
  • 資料種別
    ART
  • ISSN
    09122834
  • NDL 記事登録ID
    6193534
  • NDL 雑誌分類
    ZP5(科学技術--化学・化学工業--化学工学)
  • NDL 請求記号
    Z17-1062
  • データ提供元
    CJP書誌  NDL  J-STAGE 
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