Relation between Schottky Barrier Height and Crystalline Alignment of Al Films on Si Substrates

• Miura Yoshinao

  NEC Corp. Silicon Systems Res, Labs.

• Fujieda Shinji

  NEC Corp. Silicon Systems Res, Labs.

• Hirose Kazuyuki

  Institute of Space and Astronautical Science

Bibliographic Information

Other Title

• Si基板上のAl膜配向性がショットキー特性に及ぼす影響

Journal

• Materia Japan

  Materia Japan 40 (12), 998-998, 2001

  The Japan Institute of Metals and Materials

Keywords

• Al/Si contact
• Schottky barrier height
• epitaxial film
• interfacialstructure

Details

• CRID: 1390001204079202944
• NII Article ID: 10008847777
• NII Book ID: AN10433227
• DOI: 10.2320/materia.40.998
• ISSN: 18845843
• ISSN: 13402625
• Web Site: https://www.jstage.jst.go.jp/article/materia1994/40/12/40_12_998/_pdf
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles