Reduction of Threading Dislocation Density in GaN Films by Antisurfactant-mediated Epitaxy;

• Takeuchi Misaichi

  The Institute of Physical and Chemical Research

• Hirayama Hideki

  The Institute of Physical and Chemical Research

• Aoyagi Yoshinobu

  The Institute of Physical and Chemical Research

• Tanaka Satoru

  Research Institute for Electronic Science, Hokkaido University

Bibliographic Information

Other Title

• アンチサーファクタントによるGaN層の低転位化

Journal

• Materia Japan

  Materia Japan 40 (12), 1009-1009, 2001

  The Japan Institute of Metals and Materials

Keywords

• semiconductor
• GaN
• threading dislocation

Details

• CRID: 1390282679055859584
• NII Article ID: 10008847810
• NII Book ID: AN10433227
• DOI: 10.2320/materia.40.1009
• ISSN: 18845843
• ISSN: 13402625
• Web Site: https://www.jstage.jst.go.jp/article/materia1994/40/12/40_12_1009/_pdf
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles