Defect at the Bottom of a High Aspect-ratio Contact Hole Induced by Proton Channeling

• Ichimori Takashi

  VLSI Research Center, Oki Electric Industry Co. Ltd.

• Hirashita Norio

  VLSI Research Center, Oki Electric Industry Co. Ltd.

Bibliographic Information

Other Title

• 水素イオンのチャネリングによる微細コンタクトホール底の欠陥

Journal

• Materia Japan

  Materia Japan 40 (12), 1035-1035, 2001

  The Japan Institute of Metals and Materials

Keywords

• plasma etching
• contact hole
• proton channeling

Details

• CRID: 1390282679055963776
• NII Article ID: 10008847888
• NII Book ID: AN10433227
• DOI: 10.2320/materia.40.1035
• ISSN: 18845843
• ISSN: 13402625
• Web Site: https://www.jstage.jst.go.jp/article/materia1994/40/12/40_12_1035/_pdf
• Data Source:
  • JaLC
  • Crossref
  • CiNii Articles