A model for MOS effective channel mobility with emphasis in the subthreshold and transition regions

• YANG K.

収録刊行物

• Proc. Int. Symp. Circuits and Systems

  Proc. Int. Symp. Circuits and Systems 1 429-432, 1994

  IEEE

詳細情報

• CRID: 1571980074601828096
• NII論文ID: 10008948002
• データソース種別:
  • CiNii Articles