Position-Controlled Carbon Nanotube Field-Effect Transistors Fabricated by Chemical Vapor Deposition Using Patterned Metal Catalyst

• Ohno Yutaka

  Department of Quantum Engineering, Nagoya University

• Iwatsuki Shinya

  Department of Quantum Engineering, Nagoya University

• Hiraoka Tatsuki

  Department of Chemistry, Nagoya University

• Okazaki Toshiya

  Department of Chemistry, Nagoya University

• Kishimoto Shigeru

  Department of Quantum Engineering, Nagoya University

• Maezawa Koichi

  Department of Quantum Engineering, Nagoya University

• Shinohara Hisanori

  Department of Chemistry, Nagoya University

• Mizutani Takashi

  Department of Quantum Engineering, Nagoya University

抄録

Position-controlled carbon nanotube field effect transistors (FETs) have been fabricated by using patterned catalysts and chemical vapor deposition. A double-layer metal of platinum and cobalt was used as the catalyst. The use of a mixture of ethanol and argon as the source gas was effective for obtaining FETs with good characteristics. Coulomb oscillation was observed at room temperature. 76% of the fabricated devices showed FET operation. The characteristics of FETs with metallic nanotubes were improved by applying a high voltage.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (6B), 4116-4119, 2003

  The Japan Society of Applied Physics

キーワード

• carbon nanotube
• field-effect transistor
• position control
• chemical vapor deposition
• metal catalyst
• Coulomb oscillation

詳細情報

• CRID: 1390001206256652672
• NII論文ID: 210000053738
• NII論文ID: 30021839213
• NII論文ID: 10011257940
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.42.4116
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/00214922
• NDL書誌ID: 6588706
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6588706
• Web Site: http://stacks.iop.org/1347-4065/42/i=6S/a=4116/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可