Growth of Transparent, Large Size GaN Single Crystal with Low Dislocations Using Ca-Na Flux System

• Kawamura Fumio

  Department of Electrical Engineering, Osaka University

• Iwahashi Tomoya

  Department of Electrical Engineering, Osaka University

• Morishita Masanori

  Department of Electrical Engineering, Osaka University

• Omae Kunimichi

  Department of Electrical Engineering, Osaka University

• Yoshimura Masashi

  Department of Electrical Engineering, Osaka University

• Mori Yusuke

  Department of Electrical Engineering, Osaka University

• Sasaki Takatomo

  Department of Electrical Engineering, Osaka University

抄録

Growth of large and transparent GaN single crystals was carried out by applying the liquid phase epitaxy (LPE) method in a Ca-Na mixed flux system. We have previously reported LPE growth of GaN in a Na flux system, and that GaN crystals grown by LPE have extreme low dislocations and show excellent photoluminescence characteristics. In this study, use of a Ca-Na mixed flux system enabled us to grow transparent GaN crystals under low nitrogen pressure and to further improve the photoluminescence (PL) characteristic. The dislocation density of this crystal is very low (2×10⁵ cm⁻² in highest point).

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (7A), L729-L731, 2003

  The Japan Society of Applied Physics

キーワード

• GaN
• bulk
• LPE
• photoluminescence
• film
• flux

詳細情報

• CRID: 1390001206254453632
• NII論文ID: 10011260375
• NII論文ID: 210000055016
• NII論文ID: 130004531088
• NII書誌ID: AA11906093
• DOI: 10.1143/jjap.42.l729
• ISSN: 13474065
• ISSN: 00214922
• ISSN: http://id.crossref.org/issn/13474065
• NDL書誌ID: 6591018
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6591018
• Web Site: http://stacks.iop.org/1347-4065/42/i=7A/a=L729/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可