SiO Mass Spectrometry and Si-2p Photoemmission Spectroscopy for the Study of Oxidation Reaction Dynamics of Si(001) Surface by Supersonic O2 Molecular Beams under 1000 K

• Teraoka Yuden

  Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute

• Yoshigoe Akitaka

  Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute

• Moritani Kousuke

  Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute Department of Chemistry, Graduate School of Science, Osaka University

書誌事項

タイトル別名

• SiO Mass Spectrometry and Si-2p Photoemission Spectroscopy for the Study of Oxidation Reaction Dynamics of Si(001) Surface by Supersonic O2 Molecular Beams under 1000 K
• SiO Mass Spectrometry and Si-2p Photoemission Spectroscopy for the Study of Oxidation Reaction Dynamics of Si(001) Surface by Supersonic O₂Molecular Beams under 1000 K

抄録

The Si¹⁸O desorption yield was measured in the Si(001) surface temperature region from 900 K to 1300 K at the ¹⁸O₂ incident energies of 0.7 eV, 2.2 eV and 3.3 eV. The Si¹⁸O desorption yield in a surface temperature region higher than 1000 K increased with increasing incident energy, indicating the incident-energy-induced oxidation and the variation of angular distribution of Si¹⁸O desorption. Inversely, the Si¹⁸O desorption yield decreased with increasing incident energy in the region from 900 K to 1000 K, indicating the coexistence of the passive and the active oxidation. In order to clarify the reaction mechanisms of the later phenomenon, real-time in-situ Si-2p photoemission spectroscopy has been performed. The obtained Si-2p spectra showed the variation of the oxide-nuclei quality from the sub-oxide-rich structure to the SiO₂-rich structure. The formation of the SiO₂ structure suppresses the SiO desorption due to the enhanced O₂ sticking at backbonds by the action of incident energy.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (7B), 4671-4675, 2003

  The Japan Society of Applied Physics

キーワード

• Si(001)
• O<SUB>2</SUB>
• passive oxidation
• active oxidation
• photoemission spectroscopy
• SiO
• synchrotron radiation
• Si 2p
• incident energy

詳細情報

• CRID: 1390001206256426240
• NII論文ID: 10011446197
• NII論文ID: 210000053876
• NII論文ID: 130004531181
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.42.4671
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6629514
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6629514
• Web Site: http://stacks.iop.org/1347-4065/42/i=7S/a=4671/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可