Simulation of Ultrathin Body Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors Based on Drift-Diffusion Model Incorporating an Effective Potential

• Sano Eiichi

  Research Center for Integrated Quantum Electronics, Hokkaido University

抄録

We applied an effective potential method to drift-diffusion (DD)-based simulation of the threshold voltage characteristics for ultrathin body silicon-on-insulator (UTB-SOI) metal–oxide–semiconductor field-effect transistors (MOSFETs). Comparisons were made between simulated and measured threshold voltage and subthreshold swing characteristics as functions of silicon body thickness and gate length. A good agreement was obtained between threshold voltage and silicon body thickness characteristics simulated by the effective potential method and those calculated by a semianalytical model considering quantum effects. It was concluded that a DD-based simulator incorporating the effective potential method would be very useful for designing nanoscale UTB-SOI MOSFETs.

収録刊行物

• Japanese Journal of Applied Physics

  Japanese Journal of Applied Physics 42 (8), 4987-4991, 2003

  The Japan Society of Applied Physics

キーワード

• MOSFET
• silicon-on-insulator
• drift-diffusion model
• quantum-mechanical effect
• short-channel effect

詳細情報

• CRID: 1390282681232761600
• NII論文ID: 10011447528
• NII論文ID: 210000053953
• NII書誌ID: AA10457675
• DOI: 10.1143/jjap.42.4987
• ISSN: 13474065
• ISSN: 00214922
• NDL書誌ID: 6652954
• Web Site: http://id.ndl.go.jp/bib/6652954
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6652954
• Web Site: http://stacks.iop.org/1347-4065/42/i=8R/a=4987/pdf
• 本文言語コード: en
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
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