The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO<sub>2</sub>
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- Fukatsu Shigeto
- Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University
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- Takahashi Tomonori
- Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University
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- Itoh Kohei M.
- Department of Applied Physics and Physico-Informatics and CREST-JST, Keio University
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- Uematsu Masashi
- NTT Basic Research Laboratories, NTT Corporation
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- Fujiwara Akira
- NTT Basic Research Laboratories, NTT Corporation
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- Kageshima Hiroyuki
- NTT Basic Research Laboratories, NTT Corporation
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- Takahashi Yasuo
- NTT Basic Research Laboratories, NTT Corporation
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- Shiraishi Kenji
- Institute of Physics, University of Tsukuba
書誌事項
- タイトル別名
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- The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
- Effect of Partial Pressure of Oxygen on Self Diffusion of Si in SiO2
この論文をさがす
抄録
The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor silicon wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about ±33%.
収録刊行物
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- Japanese Journal of Applied Physics
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Japanese Journal of Applied Physics 42 (12B), L1492-L1494, 2003
The Japan Society of Applied Physics
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詳細情報 詳細情報について
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- CRID
- 1390282681240345216
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- NII論文ID
- 210000054796
- 10011841401
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- NII書誌ID
- AA11906093
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- ISSN
- 13474065
- 00214922
- http://id.crossref.org/issn/13474065
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- NDL書誌ID
- 6785424
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- 本文言語コード
- en
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- データソース種別
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- JaLC
- NDL
- Crossref
- CiNii Articles
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- 抄録ライセンスフラグ
- 使用不可