The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO<sub>2</sub>

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  • The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2
  • Effect of Partial Pressure of Oxygen on Self Diffusion of Si in SiO2

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The self-diffusion coefficient of Si in thermal oxides (SiO2) formed on semiconductor silicon wafers has been determined with isotope heterostructures, natSiO2/28SiO2, as a function of the partial pressure of oxygen mixed into argon annealing ambient. The natSiO2 layers contain 3.1% of 30Si stable isotopes while the 28SiO2 layers are depleted of 30Si stable isotopes down to 0.003%, and the diffusion depth profiles of 30Si isotopes from the natSiO2 to 28SiO2 layers after thermal annealing have been determined by secondary ion mass spectrometry (SIMS). The Si self-diffusivity is found not to depend on the partial pressure of oxygen within our experimental error of about ±33%.

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