ZnOバリスタのSi添加の課電劣化改善への影響

• 里井 陽平

  同志社大学

• 平井 秀樹

  同志社大学

• 吉野 浩行

  同志社大学

• 吉門 進三

  同志社大学

書誌事項

タイトル別名

• The Effects of Si Addition on Electrical Degradation of ZnO Varistors
• ZnO バリスタ ノ Si テンカ ノ カデンレッカ カイゼン エ ノ エイキョウ

抄録

The effects of Si addition on the electrical degradation of the ZnO varistors were investigated by voltage-current (V-I ), capacitance-voltage (C-V ) methods, and Isothermal Capacitance Transient Spectroscopy (ICTS). The nonlinearity index α for the Bi-Mn-Si-added ZnO varistors didn’t show the remarkable change but that for the Bi-Co-Si-added ZnO varistors decreased by Si addition. Values of α after electrical degradation showed the local maximum at approximately 700molppm for Bi-Mn-added ZnO varistors and at approximately 500molppm for Bi-Co-added ZnO varistors. It is found that the electrical degradation can be hindered at these optimum Si contents. E_C-E_T showed the local maximum at the optimum Si content similar to α for the Bi-Mn-Al-added ZnO varistors but those for Bi-Co-Si-added ZnO varistors showed the local minimum at the optimum Si content contrary to α for Bi-Co-Al-added ZnO varistors. The density N_is of the interface trap levels obtained by C-V characteristics and ICTS for both kinds of ZnO varistor showed the local minimum at the optimum Si content similar to Al added Bi-Mn-added and Bi-Co-added ZnO varistors.

収録刊行物

• 電気学会論文誌．　Ａ

  電気学会論文誌．　Ａ 124 (2), 189-195, 2004

  一般社団法人 電気学会

キーワード

• ZnOバリスタ
• 課電劣化
• Si添加
• <i>V</i>-<i>I</i>特性
• <i>C</i>-<i>V</i>特性
• ICTS
• 界面準位

詳細情報

• CRID: 1390282679569441536
• NII論文ID: 10011964967
• NII論文ID: 30011540942
• NII書誌ID: AN10136312
• DOI: 10.1541/ieejfms.124.189
• ISSN: 13475533
• ISSN: 03854205
• NDL書誌ID: 6840237
• Web Site: https://ndlsearch.ndl.go.jp/books/R000000004-I6840237
• Web Site: https://www.jstage.jst.go.jp/article/ieejfms/124/2/124_2_189/_pdf
• 本文言語コード: ja
• データソース種別:
  • JaLC
  • NDL
  • Crossref
  • CiNii Articles
• 抄録ライセンスフラグ: 使用不可