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A high-performance SiGe HBT/BiCMOS technology is reviewed. A nano-meter scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.
- IEEJ Transactions on Electronics, Information and Systems
IEEJ Transactions on Electronics, Information and Systems 124(2), 284-288, 2004-02-01
The Institute of Electrical Engineers of Japan