高性能 SiGe HBT/BiCMOS デバイス技術  [in Japanese] A High-Performance SiGe HBT/BiCMOS Technology  [in Japanese]

Abstract

A high-performance SiGe HBT/BiCMOS technology is reviewed. A nano-meter scaling of epitaxial SiGe base layer is an effective to improve cutoff frequency. Non-self-aligned structure and self-aligned structure in SiGe HBTs are compared in terms of their process flows and characteristics. An ECL gate delay of 4.9 psec is achieved by the high-yield self-aligned SiGe HBTs with a maximum oscillation frequency of 183 GHz. Without performance degradation the SiGe HBT and advanced CMOS technology are integrated with high-performance passive elements for mixed signal system-on-a-chips.

Journal

IEEJ Transactions on Electronics, Information and Systems  

IEEJ Transactions on Electronics, Information and Systems 124(2), 284-288, 2004-02-01 

The Institute of Electrical Engineers of Japan

References:  17

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Codes

  • NII Article ID (NAID) :
    10011965459
  • NII NACSIS-CAT ID (NCID) :
    AN10065950
  • Text Lang :
    JPN
  • Article Type :
    REV
  • ISSN :
    03854221
  • NDL Article ID :
    6841207
  • NDL Source Classification :
    ZN31(科学技術--電気工学・電気機械工業)
  • NDL Call No. :
    Z16-795
  • DOI :
    10.1541/ieejeiss.124.284
  • Databases :
    CJP  NDL  J-STAGE 

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