Effects of Hydrogen Introduction on Electrical and Optical Properties of Cd-doped Ge Oxide and Zn Oxide Thin Films

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抄録

Cadmium-doped Ge oxide and Zn oxide thin films were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All deposited films except for highly Cd-doped Ge oxide were transparent to visible light. Hydrogen introduction reduced the resistivity of the films, although the optical transmittance for visible light did not change significantly. The enhancement of conductivity could be attributed to the increase in carrier density by the hydrogen introduction.

収録刊行物

  • Materials transactions

    Materials transactions 43(5), 1142-1145, 2002-05-01

    公益社団法人 日本金属学会

参考文献:  11件中 1-11件 を表示

被引用文献:  2件中 1-2件 を表示

各種コード

  • NII論文ID(NAID)
    10012323675
  • NII書誌ID(NCID)
    AA1151294X
  • 本文言語コード
    ENG
  • 資料種別
    ART
  • ISSN
    13459678
  • NDL 記事登録ID
    6180417
  • NDL 雑誌分類
    ZP41(科学技術--金属工学・鉱山工学)
  • NDL 請求記号
    Z53-J286
  • データ提供元
    CJP書誌  CJP引用  NDL  J-STAGE 
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