Effects of Protium Introduction on Electrical and Optical Properties of Tin-Germanium Oxide Thin Films

DOI Web Site Web Site 31 References
  • Arita Makoto
    Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University
  • Konishi Hirofumi
    Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University
  • Masuda Masataka
    Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University
  • Hayashi Yasunori
    Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University

Search this article

Abstract

Tin-germanium oxide thin films with various Ge/Sn ratios were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All the as-deposited films were transparent to visible light. No effect was observed by hydrogen ion implantation on the electrical resistivity of the Ge rich (Sn/Ge≤1) films. On the other hand, hydrogen ion implantation improved the conductivity of the Sn rich (Sn/Ge≥4) films. The enhancement of the conductivity would be attributed to the increase in carrier density by protium introduction.

Journal

  • MATERIALS TRANSACTIONS

    MATERIALS TRANSACTIONS 43 (11), 2670-2672, 2002

    The Japan Institute of Metals and Materials

References(31)*help

See more

Keywords

Details 詳細情報について

Report a problem

Back to top